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| FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode March 2008 FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -20V, -3.1A, 95m: Features MOSFET Max rDS(on) = 95m: at VGS = -4.5V, ID = -3.1A Max rDS(on) = 141m: at VGS = -2.5V, ID = -2.5A HBM ESD protection level > 2.5kV (Note 3) General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 A NC D A1 NC 2 D3 MicroFET 2X2 C G S 6C 5G 4S MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings -20 12 -3.1 -6 1.4 0.7 -55 to +150 20 2 Units V V A W C V A Thermal Characteristics RTJA RTJA RTJA RTJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 C/W Package Marking and Ordering Information Device Marking .P29 Device FDFMA2P029Z Package MicroFET 2X2 1 Reel Size 7" Tape Width 8mm Quantity 3000 units www.fairchildsemi.com (c)2008 Fairchild Semiconductor Corporation FDFMA2P029Z Rev.B1 FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250PA, VGS = 0V ID = -250PA, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V -20 -12 -1 10 V mV/C PA PA On Characteristics VGS(th) 'VGS(th) 'TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = -250PA ID = -250PA, referenced to 25C VGS = -4.5V, ID = -3.1A VGS = -2.5V, ID = -2.5A VGS = -4.5V, ID = -3.1A,TJ =125C VDS = -10V, ID = -3.1A -0.6 -1.0 4 60 88 87 -11 95 141 140 S m: -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHz 540 120 100 720 160 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD = -10V, ID = -3.1A VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6: 13 11 37 36 7 1.1 2.4 24 20 59 58 10 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.1A (Note 2) -0.8 25 9 -1.1 -1.2 A V ns nC IF = -3.1A, di/dt = 100A/Ps Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1mA VR = 20V IF = 500mA VF Forward Voltage IF = 1A TJ = 25C TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 20 30 10 0.32 0.21 0.37 0.28 300 45 0.37 0.26 0.435 0.33 V V PA mA FDFMA2P029Z Rev.B1 2 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: 1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJCis guaranteed by design while RTJA is determined by the user's board design. (a) MOSFET RTJA = 86C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RTJA = 173C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RTJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. (d) Schottky RTJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDFMA2P029Z Rev.B1 3 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 6 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.6 VGS =-2.0V 5 4 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -4.5V 2.2 1.8 VGS = -3.5V 3 2 1 0 0.0 VGS = -3.0V VGS = -2.5V VGS = -1.5V VGS = -2.5V VGS = -3.0V 1.4 1.0 0.6 0 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VGS = -4.5V 0.5 1.0 1.5 2.0 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 3 4 -ID, DRAIN CURRENT(A) 5 6 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -3.1A VGS = -4.5V 200 ID = -1.55A PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 160 120 TJ = 125oC 80 TJ = 25oC 40 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 -ID, DRAIN CURRENT (A) 5 4 3 2 1 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VDD= -5V 1 TJ = 125oC 0.1 0.01 0.001 0.0001 0.0 TJ = 25oC TJ = 125oC TJ = -55oC TJ = -55oC TJ = 25oC 0 0.0 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMA2P029Z Rev.B1 4 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 IDD = -3.1A 1000 Ciss 8 6 4 2 0 0 2 VDD = -15V VDD = -10V CAPACITANCE (pF) VDD = -5V Coss 100 f = 1MHz VGS = 0V Crss 4 6 8 10 Qg, GATE CHARGE(nC) 12 14 50 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) 20 10 -ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 50 40 30 20 10 0 -4 10 SINGLE PULSE SINGLE PULSE o RTJA = 173 C/W TA=25 C o rDS(on) LIMIT 100us 1ms 10ms VGS=-4.5V 1 0.1 SINGLE PULSE R TJA =173 o C/W TA = 25 C o 100ms 1s 10s DC 0.01 0.1 1 10 60 10 -3 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 10 IF, FORWARD CURRENT(A) TJ = 125oC IR, REVERSE LEAKAGE CURRENT (mA) 100 TJ = 125oC 1 10 1 0.1 0.01 0.001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 0.1 TJ = 85oC TJ = 85oC 0.01 TJ = 25oC TJ = 25oC 0.001 0 200 400 600 VF, FORWARD VOLTAGE(mV) 800 Figure 11. Schottky Diode Forward Voltage Figure 12. Schottky Diode Reverse Current FDFMA2P029Z Rev.B1 5 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZTJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA -2 -1 0 1 2 3 10 -3 10 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2P029Z Rev.B1 6 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 FDFMA2P029Z Rev.B1 7 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDFMA2P029Z Rev.B1 8 www.fairchildsemi.com |
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